smd type transistors 1 2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1 base 2 collector 3 emitter www.kexin.com.cn silicon npn triple diffusion planar type darlington 2SD1611 features high forward current transfer ratio h fe high collector-base voltage (emitter open) v cbo absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage (emitter open) v cbo 500 v collector-emitter voltage (base open) v ceo 400 v emitter-base voltage (collector open) v ebo 5v collector current i c 6a peak collector current i cp 10 a collector power dissipation 40 a ta = 25 1.3 w junction temperature t j 150 storage temperature t stg -55to+150 p c internal connection
2 smd type transistors www.kexin.com.cn electrical characteristics ta = 25 parameter symbol testconditons min typ max unit emitter-base voltage (collector open) v ebo i e =0.1a,i c =0 5 v collector-emitter sustaining voltage* v ceo(sus) i c = 2 a, l = 10 mh 400 v collector-base cutoff current (emitter open) i cbo v cb = 350 v, i e = 0 100 a forward current transfer ratio h fe v ce =2v,i c = 2 a 500 collector-emitter saturation voltage v ce(sat) i c =3a,i b =0.06a 1.5 v base-emitter saturation voltage v be(sat) i c =3a,i b =0.06a 2.5 v transition frequency f t v ce =10v,i c =1a,f=1mhz 15 mhz *. v ceo(sus) test circuit 2SD1611
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